Semiconductor device including a field effect transistor having

Details Semiconductor device including a field effect transistor having Semiconductor device including a field effect transistor having

1988-11-22

1991-02-05

James, Andrew J.

357 238, 357 13, 357 20, 357 86, H01L 2910, H01L 2978

Patent

active

049909762

ABSTRACT:
A field effect transistor includes an N-type semiconductor substrate of a drain region, a P-type base region formed in a surface of the semiconductor substrate, an N-type source region formed in the base region, a gate electrode formed on a base region between the source region and the semiconductor substrate, an N-type region having higher impurity concentration than the semiconductor substrate and formed in the surfaces of both the P-type base region and the N-type semiconductor substrate for forming a Zener diode between source and drain, a source electrode formed on the surface and connected to the source and base region, and a drain electrode connected to the semiconductor substrate. The N-type region for forming a Zener diode is formed by an ion implantation method.

REFERENCES:
patent: 4100561 (1978-07-01), Ollendorf
patent: 4145703 (1979-03-01), Blanchard
Sze "Physics of Semiconductor Dev.", pp. 494-495, (1981).

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