Semiconductor device with thin film resistor

Details Semiconductor device with thin film resistor Semiconductor device with thin film resistor

1994-10-14

1995-12-12

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257540, 257537, H01L 2302, H01L 2702

Patent

active

054752540

ABSTRACT:
On a semiconductor substrate, a thin film resistor and a metal wiring for electrically extracting the thin film resistor are formed via a firth interlayer insulator. A second interlayer insulator covering the thin film resistor and the metal wiring is formed on the first insulation layer. By removing the portion of the second interlayer insulator above the thin film resistor by etching, the insulator above the thin film resistor is provided thinner thickness. A heat radiating metal layer is formed on the second interlayer insulator having the thinner thickness.

REFERENCES:
patent: 3862017 (1975-01-01), Tsunemitsu et al.
patent: 4091408 (1978-05-01), Lee et al.
"A High-Power GaAs FET Having Buried Plated Heat Sink for High-Performance MMIC's" vol. 41 No. 1 Jan. 1994, Ishikawa et al.

Affiliated with

Also associated with

Rating

Semiconductor device with thin film resistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with thin film resistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with thin film resistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1361930