MIS transistor having second conductivity type source and drain

Details MIS transistor having second conductivity type source and drain MIS transistor having second conductivity type source and drain

1993-03-24

1995-12-12

Loke, Steven R.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257 66, 257347, 257352, 257616, H01L 31072, H01L 2904, H01L 2701, H01L 31117

Patent

active

054752442

ABSTRACT:
An MIS transistor has a channel portion of a first conduction type of first semiconductor material formed on an insulating substrate, second conduction type source and drain regions sandwiching said channel portion therebetween, and a gate electrode formed on a main surface of the channel portion with an insulating film therebetween, wherein the source region is made of the first semiconductor material and a second semiconductor material having an energy band gap smaller than that of the first semiconductor material and a heterojunction between the first and second semiconductor materials is provided outside of a depletion layer region formed in the junction between the source and channel portions, and inside a diffusion length L.sub.d from a depletion edge.

REFERENCES:
patent: 4673957 (1987-06-01), Ovshinsky et al.
patent: 4727044 (1988-02-01), Yamazaki
patent: 5034788 (1991-07-01), Kerr
patent: 5036374 (1991-07-01), Shimbo
patent: 5049953 (1991-09-01), Mihara et al.
patent: 5142641 (1992-08-01), Fujioka
IBM Technical Disclosure Bulletin, vol. 33, No. 4 Sep. 1990, p. 411-413 Pat. Abs. of Japan, vol. 014-133, No. 02001178.

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