Opto-electronic image sensor arrangement

Details Opto-electronic image sensor arrangement Opto-electronic image sensor arrangement

1988-06-06

1990-04-03

James, Andrew J.

357 30G, 357 30Q, 357 65, 357 68, H01L 2190

Patent

active

049145045

ABSTRACT:
Thin-film photodiodes arranged in lines on a substrate are connected to read-out chips arranged on the same substrate. They are connected thereto via thin-film interconnects which differ in length and which run parallel to one another. For compensating the interconnect capacitances given neighboring interconnects which differ in length, their widths are dimensioned smaller or larger in one or more interconnect sub-sections. Thus, the sum of the coupling capacitances of all sub-sections of two neighboring interconnects always have the same value, independently of the overall length. The invention eliminates the inhomogeneities in the sensor signal caused by the different lengths of the read-out lines. The invention is employed for opto-electronic reading equipment, particularly in office automation.

REFERENCES:
patent: 4680477 (1987-07-01), Sato
Proceedings of SPIE-The International Society for Optical Engineering, Jan. 21-22, 1986, Los Angeles, California, "a-Si:H Image Sensor: Some Aspects of Physics and Performance", by K. Kempter, pp. 120-126.
IEEE Transactions on Components, Hybrids, and Manufacturing Technology, vol. CHMT-9, No. 3, Sep. 1986, "Analysis and Design of a Large-Scale Linear Image Sensor Using Amorphous Silicon", by Kouichi Seki et al, pp. 304-309.
Mat. Res. Soc. Symp. Proc., vol. 70-1986 Materials Research Society, "A-SI:H Image Sensors: Some Aspects of Physics and Performance", by K. Rosan et al, pp. 683-688.
Conference Volume of IEEE Conf. on Photo Electronic Imaging, London, 1985, No. 253, pp. 92 through 95, "Investigations on the Performance of an a-Si:H Linear Image Sensor", by K. Rosan et al.

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