Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1987-01-08

1990-04-03

Hille, Rolf

357 59, 357 236, H01L 2702

Patent

active

049144987

ABSTRACT:
In a semiconductor device having a thin insulating film of 300 .ANG. or less in thickness on which a conductive layer is provided, the conductive layer is connected to the semiconductor substrate at a position outside the active regions. With such a structure, negative charges accumulated on the conductive layer during the reactive ion etching or ion implantation process can be easily discharged to the semiconductor substrate to prevent a dielectric breakdown of the thin insulating film. In the embodiment, the thin insulating film is a dielectric film of a MOS storage capacitor of a one-transistor type memory cell and the conductive layer is the upper electrode of the MOS capacitor.

REFERENCES:
patent: 4234889 (1980-11-01), Raymond et al.
patent: 4322736 (1982-03-01), Sasaki et al.
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 4543597 (1985-09-01), Shibata
patent: 4622570 (1986-11-01), Taguchi
patent: 4641166 (1977-02-01), Takemae et al.
patent: 4737835 (1988-04-01), Ariizumi et al.

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