Patent
1988-12-21
1990-04-03
James, Andrew J.
357 54, 357 59, H01L 2702
Patent
active
049144979
ABSTRACT:
The semiconductor device provided with a MIS capacitor in which an oxidation-resist film to be used for forming a field oxide film partly buried in a semiconductor by means of the selective oxidation technique is employed as a dielectric. A peripheral edge portion of the oxidation-resist film is turned up at a bird's-beak-shaped edge portion of the field oxide film, so that a gap space is produced between the peripheral edge portion of the oxidation-resist film and the bird's-beak-shaped edge portion of the field oxide film. An insulator layer is formed at the peripheral edge portion of the oxidation-resist film. An upper conductor layer of the MIS capacitor provided on the oxidation-resist film is elongated on this insulator layer.
REFERENCES:
patent: 4329706 (1982-05-01), Cowder et al.
patent: 4335505 (1982-06-01), Shibata
patent: 4360900 (1982-11-01), Bate
patent: 4377029 (1983-03-01), Ozawa
patent: 4403394 (1980-12-01), Shepard et al.
patent: 4441246 (1984-04-01), Redwine
patent: 4451841 (1984-05-01), Hori et al.
patent: 4466177 (1984-08-01), Chao
patent: 4489338 (1984-12-01), Vonchen
patent: 4492973 (1985-01-01), Ogura
patent: 4638460 (1987-01-01), Matsumoto
IEEE Transactions on Electron Devices, Oct. 1976 by Sodini et al, pp. 1187-1189.
James Andrew J.
NEC Corporation
Prenty Mark
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