Fishing – trapping – and vermin destroying
Patent
1995-04-25
1995-12-12
Thomas, Tom
Fishing, trapping, and vermin destroying
437982, 437240, 148DIG133, H01L 2126, H01L 21268
Patent
active
054749557
ABSTRACT:
The present invention teaches a method for fabricating semiconductors. The method initially comprises the step of forming a conformal layer superjacent at least two conductive layers. The conformal layer preferably comprises tetraethylorthosilicate ("TEOS") and has a thickness of at least 50 .ANG.. Subsequently, a barrier layer is formed superjacent the conformal layer to prevent subsequent layers from diffusing into active regions. The barrier layer preferably comprises Si.sub.3 N.sub.4, though other suitable materials known to one of ordinary skill in the art may be employed. Further, a glass layer is then formed superjacent the barrier layer. The glass layer comprises at least one of SiO.sub.2, phosphosilicate glass, borosilicate glass, and borophosphosilicate glass, and has a thickness of at least 1 k.ANG.. Upon forming the glass layer, the glass layer is heated to a temperature of at least 800.degree. C. for at least 15 minutes while introducing H.sub.2 and O.sub.2 at a substantially high temperature to cause vaporization, thereby causing the glass layer to reflow. Next, the glass layer is exposed to a gas and radiant energy for approximately 5 seconds to 60 seconds, thereby making said glass layer substantially planar. The radiant energy generates a temperature substantially within the range of 700.degree. C. to 1250.degree. C. Further, the gas comprises at least one of N.sub.2, NH.sub.3, O.sub.2, N.sub.2 O, Ar, Ar-H.sub.2, H.sub.2, GeH.sub.4, and a Fluorine based gas.
REFERENCES:
patent: 4630343 (1986-12-01), Pierce
Wolf et al., vol. I, Silicon Processing for the VLSI Era, Lattice Press, 1986.
Wolf et al., vol. II, Silicon Processing for the VLSI Era, Lattice Press, 1990.
Improvement of Dielectric Integrity of TiSi.sub.x -Polycide-gate System by Using Rapidly Nitrided "Oxides" by T. Hori, N. Yoshii & H. Iwasaki, pp. 2571-2574, 1988 Fluorinated Silicon Nitride Films.
"Reduced Thermal Budget Borophosphosilicate Glass (BPSG) Fusion and Implant Activation Using Rapid Thermal Annealing and Skam Reflow", R. Thakur et al. Materials Research Society Mar. 1993.
Gurley Lynne A.
Micro)n Technology, Inc.
Paul David J.
Thomas Tom
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