Method for manufacturing a capacitor in a semiconductor device

Fishing – trapping – and vermin destroying

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437 52, 437233, 437919, 437977, 148DIG105, H01L 218242

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active

054749506

ABSTRACT:
The present invention provides a method for manufacturing a capacitor in a semiconductor device which increases a capacitance of the memory cell and improves a step coverage of a conducting material. The present invention provides a method for manufacturing a capacitor in a semiconductor device, comprising steps of: forming a first conducting layer 2, an oxide layer 3 and an A--B alloy 4a on an insulation layer 1 sequentially; settling a superfluous B material 4c dissolved in a A material 4b on the oxide layer 3 by a heat treatment so that the B material is separated from the A material; only etching the A material 4b by an echant and etching an exposed oxide layer 3 by using a settled B material 4c as an etch barrier; and etching an exposed first conducting layer 2 up to an intended depth by using the separated B material 4c and a residual oxide layer 3 as an etch barrier.

REFERENCES:
patent: 5134086 (1992-07-01), Ahn
patent: 5164881 (1992-11-01), Ahm
patent: 5227322 (1993-07-01), Ko et al.
patent: 5232876 (1993-08-01), Kim et al.
patent: 5240558 (1993-08-01), Kawasaki et al.
patent: 5254503 (1993-10-01), Kenney

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