Method for forming semiconductor device comprising metal oxide

Details Method for forming semiconductor device comprising metal oxide Method for forming semiconductor device comprising metal oxide

1993-11-05

1995-12-12

Quach, T. N.

Fishing, trapping, and vermin destroying

437 43, 437197, 437228, 437237, H01L 21336

Patent

active

054749450

ABSTRACT:
An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

REFERENCES:
patent: 4455737 (1984-06-01), Godejahn, Jr.
patent: 4468855 (1984-09-01), Sasaki
patent: 4557036 (1985-12-01), Kyuragi et al.
patent: 4646426 (1987-03-01), Sasaki
patent: 4746628 (1988-05-01), Takafuji et al.
patent: 4769338 (1988-09-01), Ovshinsky et al.
patent: 4868137 (1989-09-01), Kubota
patent: 4900695 (1990-02-01), Takahashi et al.
patent: 4905066 (1990-02-01), Kohjo et al.
patent: 5097311 (1992-03-01), Iwase et al.
Wolf et al., Silicon Processing, Lattice Press, vol. 1, 1986, pp. 151-154.
Wolf, Silicon Processing, Lattice Press, 1990, vol. 2, pp. 66-72.

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