Multilayer positive temperature coefficient thermistor device

Details Multilayer positive temperature coefficient thermistor device Multilayer positive temperature coefficient thermistor device

1994-04-18

1996-02-20

Hoang, Tu

Electrical resistors

Resistance value responsive to a condition

Current and/or voltage

338225D, 338314, 29612, H01C 710

Patent

active

054932661

ABSTRACT:
A plurality of semiconductor substrates having positive resistance-temperature coefficients are bonded to each other through a glass layer to be stacked. First and second terminal electrodes are formed on end surfaces of such a stacked structure respectively. First and second ohmic electrodes are formed on respective major surfaces of each semiconductor substrate, and the first and second ohmic electrodes are connected to the first and second terminal electrodes respectively. The ohmic electrodes contain a metal, other than silver, exhibiting an ohmic property, such as zinc, aluminum, nickel or chromium, for example. The terminal electrodes also contain a metal, other than silver, exhibiting an ohmic property. The terminal electrodes may be provided on surfaces thereof with layers which are made of a metal having excellent solderability.

REFERENCES:
patent: H415 (1988-01-01), Newnham et al.
patent: 3914727 (1975-10-01), Fabricius
patent: 4486737 (1984-12-01), Ott
patent: 4766409 (1988-08-01), Mandai

Affiliated with

Also associated with

Rating

Multilayer positive temperature coefficient thermistor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilayer positive temperature coefficient thermistor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer positive temperature coefficient thermistor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1358575