Coherent light generators – Particular active media – Semiconductor
Patent
1991-05-09
1993-10-19
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
052552799
ABSTRACT:
On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purified, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.
REFERENCES:
patent: 5058120 (1991-10-01), Nitta et al.
Ikeda et al., Applied Physics Letters (1985) 47(10):1027-1028.
T. Hayakawa et al., Journal of Crystal Growth, 95 (1989) pp. 343-347.
Hosoda Masahiro
Matsui Sadayoshi
Suyama Takahiro
Takahashi Kosei
Tsunoda Atsuo
Davie James W.
Sharp Kabushiki Kaisha
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