Conductive via structure for integrated circuits and method for

Details Conductive via structure for integrated circuits and method for Conductive via structure for integrated circuits and method for

1994-11-07

1996-02-20

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257764, H01L 2348, H01L 2352, H01L 2940

Patent

active

054931525

ABSTRACT:
A conductive via structure establishes an electrical interconnection between two conductive layers in a semiconductor structure by connecting a first conductive layer on a semiconductor substrate to a second conductive layer by means of a conductive via structure extending through a non-conductive layer separating the two conductive layers. The non-conductive layer preferably includes a layer of spin-on-glass (SOG), and is provided with a via aperture therethrough. A conductive spacer, preferably of TiW, is fabricated within the via aperture in abutment with the walls of the via aperture. A second conductive layer is fabricated over the non-conductive layer, the conductive spacer, and within the via aperture, to establish the completed electrical interconnection. The via structure reduces out-gassing and chipping from the SOG layer, yet provides a low electrical resistance path between the two conductive layers.

REFERENCES:
patent: 4712125 (1987-12-01), Bhatia et al.
patent: 4962414 (1990-10-01), Liou et al.
patent: 5093710 (1992-03-01), Higuchi
patent: 5196724 (1993-03-01), Gordon et al.
patent: 5243220 (1993-09-01), Shibata
patent: 5281850 (1994-01-01), Kanamori
patent: 5294836 (1994-03-01), Kishi

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