Solid state imaging device

Details Solid state imaging device Solid state imaging device

1985-02-05

1987-03-24

Rubinson, Gene Z.

Facsimile and static presentation processing

Facsimile

Recording apparatus

357 24, H04N 314

Patent

active

046529250

ABSTRACT:
A solid state imaging device comprises a plurality of photodetectors (111 to 149) disposed two-dimensionally on a semiconductor substrate and a plurality of vertical charge transfer devices (411 to 431 and 511 to 528). Transfer gates (211 to 249) are provided in association with the respective photodetector (111 to 149) and the respective vertical charge transfer devices so as to be disposed therebetween. The transfer gates (211 to 249) are electrically connected for each group of three transfer gates in a horizontal direction, a driving signal being applied selectively to each group from a scanning circuit (300). Accordingly, by means of one of the groups of the transfer gates (211 to 249), to which a driving signal is selectively applied from the scanning circuit (300), a signal charge generated in the corresponding ones of the photodetectors (111 to 149) is transferred to the vertical charge transfer devices (411 to 431 and 511 to 528). By means of the vertical charge transfer devices (411 to 431 and 511 to 528), a signal charge in an arbitrary row is transferred to a horizontal charge transfer device through storage gates (610, 620 and 630). Consequently, for each vertical transfer, only a signal charge corresponding to one picture element is contained in a vertical line and accordingly if overflow of a signal charge occurs, a blooming phenomenon will never occur.

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Hobson, Geoffrey Stanley, Charge-Transfer Devices, Edward Arnold, London, 1978, pp. 18-27.
"The Resistive Gate CTD Area-Image Sensor", by Hendrik Heyns and J. G. Van Santen, IEEE Transactions on Electron Devices, vol. ED-25, No. 2, Feb. 1978, pp. 135-139.
"A New Organization Area Image Sensor with CCD Readout through Priming Transfer", Terakawa et al, IEEE Electron Device Letters, vol. EDL-1, No. 5, May 1980, pp. 86-88.
"Platinum Silicide Schottky-Barrier IR-CCD Image Sensors", Proceedings of the 13th Conference on Solid State Devices, Tokyo, 1981, Japanese Journal of Applied Physics, vol. 21, (1982 Supplement 21-1, pp. 231-235--Kimata et al.

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