Semiconductor memory device

Static information storage and retrieval – Magnetic bubbles – Guide structure

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365168, H01L 2978

Patent

active

046528970

ABSTRACT:
A semiconductor memory device wherein a portion of source region of a field-effect transistor that serves as a memory cell has a low impurity concentration, so that hot carriers generated on the source side are injected into the floating gate. Hot carriers are generated by utilizing a large electric field intensity established by the drop of voltage in the region of low impurity concentration. The voltage difference is so great between the source region and the control gate that hot carriers generated on the source side are efficiently injected into the floating gate.

REFERENCES:
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patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4302766 (1981-11-01), Guterman et al.
patent: 4462090 (1984-07-01), Iizuka
patent: 4521448 (1985-06-01), Sasaki

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