Zener structures with connections to buried layer

Details Zener structures with connections to buried layer Zener structures with connections to buried layer

1985-09-30

1987-03-24

Edlow, Martin H.

357 58, 357 48, 357 20, 357 64, H01L 2990

Patent

active

046528954

ABSTRACT:
A buried zener diode of reduced noise, bulk resistance and dynamic resistance, formed in an N- layer having a H+ layer buried, including a P+ surface anode of greater lateral area than an N+ cathode which is connected to a surface contact through the buried N+ layer and an N+ channel extending from the surface to the buried N+ layer. It also may be formed with a buried anode by reversing the conductivity types.

REFERENCES:
patent: 3335341 (1967-08-01), Lin
patent: 3735210 (1973-05-01), Kalish et al.
patent: 3758831 (1973-09-01), Clark
patent: 3909119 (1975-09-01), Wolley
patent: 4136349 (1979-01-01), Tsang
patent: 4177095 (1979-12-01), Nelson
patent: 4291319 (1981-09-01), Carinacci

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