Metal insulator semiconductor field effect transistor

Details Metal insulator semiconductor field effect transistor Metal insulator semiconductor field effect transistor

1992-07-31

1993-03-23

Lee, John D.

H01L 2978

Patent

active

051969076

ABSTRACT:
A Metal Insulator Semiconductor Field-Effect Transistor (MISFET) has an insulating layer arranged between a gate electrode and a semiconductor substrate. The insulating layer is a layer of amorphous, hydrogenated carbon (a-C:H) with a thickness--in the region of the gate electrode--of up to 1 .mu.m, and with a resistivity (.eta.) greater than or equal to 10.sup.6 .OMEGA..multidot.cm at the boundary surface to the semiconductor substrate. The semiconductor substrate consists of a semiconductor material other than silicon.

REFERENCES:
patent: 4160261 (1979-07-01), Casey et al.
patent: 4697197 (1987-09-01), Dresner
patent: 4916510 (1990-04-01), Sano et al.
patent: 5036374 (1991-07-01), Shimbo
J. Appl. Phys., vol. 62 (Nov. 1987), pp. 3799-3802.
Appl. Phys., vol. A 48 (Jan 1989), pp. 549-558.
W. Kellner, H. Kniepkamp "GaAs-Feldeffekttransistoren", 2nd Ed., (Jan. 1989), Springer-Verlag, pp. 19-29 & 55.

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