Method of making structure for suppression of field inversion ca

Details Method of making structure for suppression of field inversion ca Method of making structure for suppression of field inversion ca

1994-09-28

1996-02-20

Fourson, George

Fishing, trapping, and vermin destroying

437235, 437241, H01L 2144, H01L 2148

Patent

active

054928656

ABSTRACT:
The invention relates to an integrated circuit including one or more amorphous silicon layers for neutralizing charges which occur in various dielectric layers during fabrication. The amorphous silicon layers include dangling silicon bonds which neutralize charges which would otherwise cause isolation breakdown, impair integrated circuit performance and increase manufacturing costs.

REFERENCES:
patent: 3649884 (1972-03-01), Haneta
patent: 4123565 (1978-10-01), Sumitomo et al.
patent: 4375125 (1983-03-01), Byatt
patent: 4502202 (1985-03-01), Malhi
patent: 4555300 (1985-11-01), Arnold
patent: 4613888 (1986-09-01), Mase et al.
patent: 4688078 (1987-08-01), Hseih
patent: 4732801 (1988-03-01), Joshi
patent: 4810673 (1989-03-01), Freeman
patent: 4972250 (1990-11-01), Omori et al.
patent: 4996081 (1991-02-01), Ellul et al.
patent: 4996167 (1991-02-01), Chen
patent: 5047826 (1991-10-01), Keller et al.
patent: 5057897 (1991-10-01), Nariani et al.
patent: 5110766 (1992-05-01), Maeda et al.
patent: 5128279 (1992-07-01), Nariani et al.
patent: 5272361 (1993-12-01), Yamazaki
patent: 5290727 (1994-03-01), Jain et al.
patent: 5356825 (1994-10-01), Hozumi et al.
patent: 5366921 (1994-11-01), Tashiro
D. Pramanik, S. R. Nariani and G. Spadini, "Field Inversion In CMOS Double Metal Circuits Due To Carbon Based SOG's", VMIC Conference, Jun. 12-13, 1989, pp. 454-462.
"Suppression of Hot-Carrier Effects in submicrometer CMOS Technology", by Chen, Min-Liang et al, IEEE Transactions on Electron Devices, vol. 35, No. 12, Dec. 1988, pp. 2210-2220.
"Mobile Charge in a Novel Spin-On Oxide (SOX): Detection of Hydrogen in Dielectrics", by N. Lifshitz et al, Journal of Electrochem. Soc., vol. 136, No. 5, May 1989, pp. 1440-1446.
"Hot-Carrier Aging of the MOS Transistor in the Presence of Spin-on Glass as the Interlevel Dielectric", by N. Lifshitz et al, IEEE Electron Device Letters, vol. 12, No. 3, Mar. 1991, pp. 140-142.
"Charge Loss in EPROM Due to Ion Generation and Transport in Interlevel Dielectric", by G. Crisenza et al, Proceedings of IEEE IEDM, 1990, pp. 107-110.
"Electroluminescence Studies in Silicon Dioxide Films Containing Tiny Silicon Islands", by D. J. DiMaria et al, Journal of Appl. Phys., vol. 56, Jul. 1984, pp. 401-416.

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