Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1994-12-14

1996-02-20

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 52, 437919, 148DIG14, 148DIG17, 148DIG112, H01L 2170

Patent

active

054928540

ABSTRACT:
A method of manufacturing a semiconductor device includes the step of forming a capacitor. The step includes the step of forming a lower electrode constituted by a polysilicon film which selectively covers a surface of a predetermined insulating film on a semiconductor substrate, and the step of performing heating in an atmosphere containing an SiH.sub.4 gas and removal of a native oxide film on a surface of the lower electrode, and then performing formation of a silicon nitride film without being exposed to an oxygen atmosphere.

REFERENCES:
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patent: 4855258 (1989-08-01), Allman et al.
patent: 5032545 (1991-07-01), Doan et al.
patent: 5089441 (1992-02-01), Moslehi
patent: 5104694 (1992-04-01), Saito et al.
patent: 5362632 (1994-11-01), Matthews
patent: 5387545 (1995-02-01), Kiyota et al.

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