Method of forming a capacitor in a semiconductor device

Details Method of forming a capacitor in a semiconductor device Method of forming a capacitor in a semiconductor device

1994-12-27

1996-02-20

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437919, 437233, H01L 218242

Patent

active

054928494

ABSTRACT:
A method of forming a capacitor in a semiconductor device is disclosed. A charge storage electrode is formed with a third polysilicon layer connected to a fourth polysilicon layer. A dielectric layer is formed with a first dielectric layer connected to a second dielectric layer. A plate electrode is formed by connecting the first polysilicon layer to the sixth polysilicon layer. The first polysilicon layer is formed under the third polysilicon layer. The first dielectric layer is formed between the first polysilicon layer and the third polysilicon layer.

REFERENCES:
patent: 5126916 (1992-06-01), Tseng
patent: 5164337 (1992-11-01), Ogawa et al.
patent: 5192702 (1993-03-01), Tseng
patent: 5219780 (1993-06-01), Jun
patent: 5268322 (1993-12-01), Lee et al.
patent: 5273925 (1993-12-01), Yamanaka
patent: 5326714 (1994-07-01), Liu et al.
patent: 5380673 (1995-01-01), Yang et al.
patent: 5403767 (1995-04-01), Kim

Affiliated with

Also associated with

Rating

Method of forming a capacitor in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a capacitor in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a capacitor in a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1355700