Semiconductor element having a resistance state transition regio

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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H01L 4500, H01L 2702, H01L 2904

Patent

active

052105989

ABSTRACT:
A semiconductor element chiefly serving as an anti fuse and a manufacturing method thereof, the anti fuse storing data by causing a transition from a high resistance state to a low resistance state by a current supplied when a voltage is imposed. The element has a three-layer electrode structure composed of an upper electrode, amorphous silicon and a silicon insulation film thereby to improve the stability and reproducibility of the programming voltage and current.

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S. M. Sze, Semiconductor Devices, Physics and Technology, John Wiley & Sons (New York) 1985 pp. 38, 66.

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