Semiconductor device having insulating layer including polyimide

Details Semiconductor device having insulating layer including polyimide Semiconductor device having insulating layer including polyimide

1987-08-25

1989-08-01

Carroll, J.

357 54, 357 63, 357 71, 357 91, H01L 2934, H01L 29167, H01L 2348

Patent

active

048537608

ABSTRACT:
A semiconductor device has a passivation layer including a polyimide film. Argon ions are implanted in the polyimide film to convert it into an electrically stable insulating film.

REFERENCES:
patent: 3801880 (1974-04-01), Harada et al.
patent: 4057659 (1977-11-01), Pammer et al.
patent: 4081292 (1978-03-01), Aoki et al.
patent: 4269631 (1981-05-01), Anantha et al.
patent: 4393092 (1983-07-01), Gill
Japanese Patent Disclosure (Kokai) No. 55-12773, Mitsubishi Electric Corporation.
PTO translation of above Japan 55-12773.

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