Solid-state CCD imaging device with transfer gap voltage control

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257223, 257229, 257232, 257233, H01L 2978, H01L 2714, H01L 3100

Patent

active

052104338

ABSTRACT:
A solid-state CCD imaging device has a substrate, photosensitive pixel cells provided as pixel sections in the substrate, and a transfer section, provided in the substrate, for transferring signal charge carriers read out from the pixel cells in a predetermined transfer direction. The transfer section has a semiconductive charge transfer channel layer formed in the substrate and transfer electrodes insulatively provided above the substrate and arrayed in the above direction while predetermined gap sections are kept therebetween. Each of the transfer electrodes defines one charge transfer stage. A gap potential control electrode layer is insulatively disposed above the electrodes. The gap potential control electrode layer is applied with a gap potential control voltage and steadily sets, in accordance with the applied voltage, the potential in layer sections of the channel layer located below the gap section of the transfer electrodes at a predetermined level intermediate between "High" and "Low" level voltages of the channel layers upon charge transfer.

REFERENCES:
patent: 4489423 (1984-12-01), Suzuki
patent: 4696021 (1987-09-01), Kawahara et al.
patent: 4709380 (1987-11-01), Itoh
patent: 4729005 (1988-03-01), Wei et al.
patent: 4774586 (1988-09-01), Koike et al.
patent: 4914493 (1990-04-01), Shiromizu

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