Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-10-15
1993-05-11
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257229, 257232, 257233, H01L 2978, H01L 2714, H01L 3100
Patent
active
052104338
ABSTRACT:
A solid-state CCD imaging device has a substrate, photosensitive pixel cells provided as pixel sections in the substrate, and a transfer section, provided in the substrate, for transferring signal charge carriers read out from the pixel cells in a predetermined transfer direction. The transfer section has a semiconductive charge transfer channel layer formed in the substrate and transfer electrodes insulatively provided above the substrate and arrayed in the above direction while predetermined gap sections are kept therebetween. Each of the transfer electrodes defines one charge transfer stage. A gap potential control electrode layer is insulatively disposed above the electrodes. The gap potential control electrode layer is applied with a gap potential control voltage and steadily sets, in accordance with the applied voltage, the potential in layer sections of the channel layer located below the gap section of the transfer electrodes at a predetermined level intermediate between "High" and "Low" level voltages of the channel layers upon charge transfer.
REFERENCES:
patent: 4489423 (1984-12-01), Suzuki
patent: 4696021 (1987-09-01), Kawahara et al.
patent: 4709380 (1987-11-01), Itoh
patent: 4729005 (1988-03-01), Wei et al.
patent: 4774586 (1988-09-01), Koike et al.
patent: 4914493 (1990-04-01), Shiromizu
Matsunaga Yoshiyuki
Miyagawa Ryohei
Ohsawa Shinji
Kabushiki Kaisha Toshiba
Larkins William D.
Ngo Ngan Van
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