Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-11-01
1993-05-11
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 22, 257185, 395246, H01L 2714
Patent
active
052104281
ABSTRACT:
Carriers are permitted escape from quantum wells within a semiconductor device in the minimum amount of time by utilizing semiconductor material in the barrier layers around the quantum well wherein the barrier layers exhibit an effective bandgap energy less than the sum of the longitudinal optical phonon energy and the exciton absorption energy.
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AT&T Bell Laboratories
Mintel William
Ranieri Gregory C.
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