Method of electrolessly depositing metals on a silicon substrate

Details Method of electrolessly depositing metals on a silicon substrate Method of electrolessly depositing metals on a silicon substrate

1993-05-10

1994-10-25

Beck, Shrive

Fishing, trapping, and vermin destroying

437245, 1566591, 427 98, 427123, 427309, 4273766, 427436, 427437, H01L 2102

Patent

active

053589076

ABSTRACT:
A thin layer of Class 1B, IIB, IIIA, IVB, VB, VIB, VIIB or VIIIB metal is deposited on silicon or a silicon-based compound by immersion in a buffered metallic salt bath containing a hydrofluoric acid etchant followed by an electroless plating bath to build up the metal thickness. This process can also be used to pattern deposited metal on silicon or a silicon-based compound. An additional use of this process is to form metal silicides out of the deposited metal.

REFERENCES:
patent: 4089993 (1978-05-01), Shirahata et al.
patent: 4576689 (1986-03-01), Makkaev et al.
patent: 4634619 (1987-01-01), Lindsay
Zwicker et al., "Anisotropic Etching of Silicon Using Electrochemical Displacement Reactions", Symposium Volue of the Electrochemical Society pp. 315-326 1973.
Zwicker et al., "The Growth of Silver and Copper Single Crystals on Silicon and the Selective Removal of Silicon by Electrochemical Displacement," Acta Electronic vol. 16 No. 4 pp. 331-338 1973.

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