Process of forming capacitive insulating film

Details Process of forming capacitive insulating film Process of forming capacitive insulating film

1991-09-03

1993-10-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

427124, 4271263, 437919, H01L 2102, B05D 512

Patent

active

052545059

ABSTRACT:
A process of forming a capacitive insulating film comprises the steps of forming a tantalum oxide film through thermochemical reaction involving organic tantalum charge gas and oxygen gas, and subsequently forming a tantalum oxide film through plasma chemical reaction involving tantalum halogenide charge gas and nitrous oxide (N.sub.2 0) gas, said steps being performed in the same apparatus.

REFERENCES:
"Highly Reliable 2.5nm Ta.sub.2 O.sub.5 Capacitor Process Technology for 256Mbit DRAMS", S. Kamiyama, T. Saeki, H. Mori, and Y. Numasawa, NEC Corporation, VLSI Development Division, Sagamihara, Kanagawa 229 Japan, IDEM Tech Dig. 1991, pp. 827-830.
Zaima et al, "Preparation and Properties of Ta.sub.2 O.sub.5 Films by LPCVD for ULSI Application", Journal of the Electrochemical Society, vol. 137, No. 4, Apr. 1990, pp. 1297-1300.
Watanabe et al, "Ta-O (At-oxide) and Nb-O (Nb-oxide) Film . . . Electron Cyclotron Resonance Plasma", Japanese Journal of Applied Physics, vol. 24, No. 6, Jun. 1985, pp. 411-413.
"Thin Dielectric Oxide Films Made by Oxygen Assisted Pyrolysis of Alkoxides", S. Pakswer and P. Skoug; Second International Conference on CVD, Los Angeles, Calif., May 1970, The Electrochemical Society, Inc. 1970, pp. 619-636.
"Photo-CVD of Tantalum Oxide Film from Pentamethoxy Tantalum for VLSI Dynamic Memories", K. Yamagishi and Y. Tarui, JJAP, vol. 25 No. 4, 1986, pp. L306-L308.

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