Method of eliminating degradation of a multilayer metallurgy/ins

Details Method of eliminating degradation of a multilayer metallurgy/ins Method of eliminating degradation of a multilayer metallurgy/ins

1992-07-06

1993-10-19

Maples, John S.

Fishing, trapping, and vermin destroying

437195, 437231, 437238, 437978, H01L 21268, H01L 21441

Patent

active

052544974

ABSTRACT:
A method is described for forming multiple metal, spin-on-glass metallurgy with substantially free field inversion. A pattern of device regions are formed with a pattern of gate dielectric and gate electrode structures which are isolated from one another. A first passivation layer is formed over the patterns. The multilayer metallurgy is formed thereover by opening a pattern of openings through the passivation layer to some of the regions. A first metallurgy layer is deposited and patterned in contact with the pattern of openings. A first silicon oxide via dielectric layer is formed over the pattern of first metallurgy layer. A spin-on-glass layer is formed over the via dielectric layer and the layer is cured. A second oxide via dielectric layer is formed thereover. Openings are formed in the second via, spin-on-glass and first via layers. A second metallurgy layer is deposited and patterned in contact with the openings to make contact to the first metallurgy. A second dielectric layer is formed thereover. Finally, the structure is illuminated with ultra violet radiation for a time sufficient to neutralize the positive charges in the structure to give a substantially free field inversion integrated circuit.

REFERENCES:
patent: 4986878 (1991-01-01), Malazgirt et al.
patent: 5003062 (1991-03-01), Yen
Pramanik et al., "Field Inversion in CMOS Double Metal Circuits . . . ", VMIC Conference, Jun. 12-13, 1989, pp. 454-462.

Affiliated with

Also associated with

Rating

Method of eliminating degradation of a multilayer metallurgy/ins does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of eliminating degradation of a multilayer metallurgy/ins, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of eliminating degradation of a multilayer metallurgy/ins will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1351321