Method of manufacturing semiconductor device by forming first an

Details Method of manufacturing semiconductor device by forming first an Method of manufacturing semiconductor device by forming first an

1991-10-18

1993-10-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 43, 148DIG112, 148DIG117, H01L 21265

Patent

active

052544893

ABSTRACT:
According to this invention, there is provided a method of manufacturing a semiconductor device. An element region and an element isolation region are formed on a semiconductor substrate of a first conductivity type. A first oxide film prospectively serving as a gate insulating film is formed in the element region. Thermal oxidization is performed after annealing is performed in nitrogen or ammonia atmosphere to nitrify an entire surface of the first oxide film. A predetermined region of a nitrified first oxide film is removed, and a second oxide film prospectively serving as a gate insulating film is formed in the predetermined region using the nitrified first oxide film as a mask. A gate electrode constituted by a polysilicon film is formed on each of the nitrified first oxide film and the second oxide film.

REFERENCES:
patent: 4113515 (1978-09-01), Kooi et al.
patent: 4621277 (1986-11-01), Ito et al.
patent: 4651406 (1987-03-01), Shimizu et al.
patent: 4971923 (1990-11-01), Nakanishi

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device by forming first an does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device by forming first an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device by forming first an will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1351273