Method for forming PNP and NPN bipolar transistors in the same s

Details Method for forming PNP and NPN bipolar transistors in the same s Method for forming PNP and NPN bipolar transistors in the same s

1992-02-21

1993-10-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 27, 437 32, 257555, 257556, 257574, 257575, 034, 034

Patent

active

052544869

ABSTRACT:
In one embodiment, this method forms PNP and NPN transistors in a same epitaxial layer. The P-type regions for both the PNP and the NPN transistors are initially defined using a single masking step. Therefore, the emitter and collector region pattern for the PNP transistor is self-aligned with the base region of the NPN transistor. All the defined regions are then doped to achieve a desired base region concentration. A next masking step forms a layer of resist over the base region, and the remainder of the previous masking pattern is retained to define the emitter and collector regions of the PNP transistor. P-type dopants are then implanted in the previously defined emitter and collector regions to form the heavily doped P++ emitter and collector regions of the PNP transistor. Thus, the P++ emitter and collector regions of the PNP transistor will be self-aligned with the P-type base region of the NPN transistor.

REFERENCES:
patent: 4403395 (1983-09-01), Curran

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