Method for manufacturing bipolar semiconductor device

Details Method for manufacturing bipolar semiconductor device Method for manufacturing bipolar semiconductor device

1991-09-17

1993-10-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 27, 148DIG10, 257 47, H01L 21265, H01L 2970

Patent

active

052544850

ABSTRACT:
There is disclosed a method for manufacturing a bipolar semiconductor device in which emitter region and active base region are formed by implanting impurities of first and second conduction types in a first semiconductor region of the first conduction type to be a collector through a non-single crystalline semiconductor thin film, a second semiconductor thin film is formed on the first semiconductor thin film, and an impurity of the first conduction type is introduced in the second semiconductor thin film after patterning the first and second semiconductor thin film so as to form an emitter electrode.

REFERENCES:
patent: 4980305 (1990-12-01), Kadota et al.
patent: 5037768 (1991-08-01), Cosentino
patent: 5116770 (1992-05-01), Kameyama et al.
patent: 5137839 (1992-08-01), Niitsu
K. Kikuchi et al., A High Speed Bi-Polar LSI Process Using Self-Aligned Double Diffusion Polysilicon Technology, Proceedings of the International Electron Devices Meeting, pp. 420-423 (Los Angeles, Calif. Dec. 7-10, 1986).
S. Ozono et al, Redistribution of Heavily Doped Arsenic in Poly-Si Film on Single Silicon Substrate during its Solid Phase Epitaxial Growth, 177th Electrochemical Society Meeting, Abstract No. 378, pp. 569-570 (1990).

Affiliated with

Also associated with

Rating

Method for manufacturing bipolar semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing bipolar semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing bipolar semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1351220