Semiconductor device including a light receiving element, an amp

Details Semiconductor device including a light receiving element, an amp Semiconductor device including a light receiving element, an amp

1989-12-07

1991-07-16

Hille, Rolf

357 19, 357 22, 357 51, 357 40, H01L 2714, H01L 3100

Patent

active

050328859

ABSTRACT:
In a high impedance type light receiver circuit comprising a light receiving device, an amplifier circuit for amplifying an output of the light receiving device and an equalizer for band compensation, a capacitor of the equalizer is formed by the same PN junction structure as that of the light receiving device, and the light receiving device, the amplifier circuit and the equalizer are integrated on one semiconductor substrate so that adjustment of the time constant of the equalizer is not necessary. In this manner, the productivity of a high impedance type light receiver circuit which can attain a higher sensitivity than a trans-impedance type circuit, is improved.

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patent: 4924285 (1990-05-01), Anderson et al.
patent: 4982256 (1991-01-01), Suzuki
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G. W. Anderson, et al, "Planar, Linear GaAs Detector-Amplifier Array with an Insulating Layer AlGaAs Spacing Layer Between the Detector and Transistor Layers", IEEE Electron Device Letters, vol. 9, No. 10, Oct. 1988, New York, US, pp. 550-552.
C. S. Harder et al, "5.2-GHz Bandwidth Monolithic GaAs Optoelectronic Receiver", IEE Electron Device Letters, vol. 9, No. 4, Apr. 1988, New York, US, pp. 171-173.
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