Oxidation enhancement in narrow masked field regions of a semico

Fishing – trapping – and vermin destroying

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437 69, 148DIG163, 148DIG116, H01L 2176

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active

053588940

ABSTRACT:
A LOCOS process is enhanced by enhancing the depth of field oxide in regions having a narrow field oxide width. Subsequent to forming a pattern of nitride to define the field oxide and active area, photoresist is applied to selected areas of the wafer. An impurity is then applied to the underlying semiconductor substrate in areas not protected by photoresist and nitride. The impurity results in an enhanced oxidation rate and therefore compensates for a thinning effect in selected field oxide areas, such as those having a narrow width. Subsequent formation of the field oxide results in the doped material being consumed by the oxide.

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