Process for fabricating isolation regions in a semiconductor dev

Details Process for fabricating isolation regions in a semiconductor dev Process for fabricating isolation regions in a semiconductor dev

1993-04-19

1994-10-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 69, 437238, H01L 21302

Patent

active

053588908

ABSTRACT:
A process for forming isolation regions (20) having a self-aligned channel-stop (22) formed by implanting dopant atoms (24) through the isolation regions (22). An isolation mask (15) is formed over an active region (16) in a semiconductor substrate (10). The isolation mask can be constructed from a variety of materials including silicon nitride, silicon oxynitride, boron nitride, polysilicon, and germanium oxide. Thick isolation regions (20) are formed on either side of the isolation mask (15) and an ion implant process is carried out to form doped regions (22) in the substrate (10) immediately below the isolation regions (20). The isolation mask (15) prevents dopant atoms (24) from entering the active region (16) of the substrate (10).

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