Patent
1989-03-02
1991-02-05
Hille, Rolf
357 23100, 357 23120, 357 53, 357 59, H01L 29780, H01L 29100, H01L 29400
Patent
active
049909746
ABSTRACT:
A field effect transistor (FET) operates in the enhancement mode without requiring inversion by setting the device's threshold voltage to twice the Fermi potential of the semiconductor material. The FET, referred to as a Fermi Threshold FET or Fermi-FET, has a threshold voltage which is independent of oxide thickness, channel length, drain voltage and substrate doping. The vertical electric field in the channel becomes zero, thereby maximizing carrier mobility, and minimizing hot electron effects. A high speed device, substantially independent of device dimensions is thereby provided, which may be manufactured using relaxed groundrules, to provide low cost, high yield devices.
Temperature dependence of threshold voltage may also be eliminated by providing a semiconductor gate contact which neutralizes the effect of substrate contact potential. Source and drain subdiffusion regions may be provided to simultaneously maximize the punch-through and impact ionization voltages of the devices, so that the short channel devices do not require scaled-down power supply voltages. Multi gate devices may be provided. An accelerator gate, adjacent the drain, may further improve performance.
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Brown Peter Toby
Hille Rolf
Thunderbird Technologies, Inc.
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