Thin film transistor and method of manufacturing the same

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357 4, 357 30, H01L 2978

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active

050328832

ABSTRACT:
A TFT of the present invention includes a transparent insulative substrate, a gate electrode formed on the substrate, a gate insulating film formed on at least the gate electrode, a semiconductor film formed at a position on the gate insulating film corresponding to the gate electrode, source and drain electrodes arranged on the semiconductor film so as to form a channel portion, a transparent insulating film covering the source and drain electrodes and the semiconductor film, and a transparent electrode connected to the source electrode. A through hole is formed in the transparent insulating film above the source electrode. The transparent electrode is formed on a portion of the transparent insulating film except for a portion above the channel portion on the semiconductor film.

REFERENCES:
patent: 3765747 (1973-10-01), Pankrantz et al.
patent: 3840695 (1974-10-01), Fischer
patent: 3862360 (1975-01-01), Dill et al.
patent: 4821092 (1989-04-01), Noguchi
Article from "Proceedings of the Ire" Entitled "The TFT-A New Thin-Film Transistor" Paul K. Weimer, pp. 1462-1469.
Article from IEEE Transactions on Electron Devices, Nov. 1973, vol. ED-20, No. 11, index page and pp. 995-1001.

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