Method for manufacturing a semiconductor device comprising a sem

Details Method for manufacturing a semiconductor device comprising a sem Method for manufacturing a semiconductor device comprising a sem

1991-10-11

1993-05-11

Quach, T. N.

Fishing, trapping, and vermin destroying

437233, 437234, 148DIG1, 20419225, H01L 21203

Patent

active

052100502

ABSTRACT:
A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diameter of 30 .ANG. to 4 .mu.m as viewed from the upper surface of said semiconductor film and contains oxygen impurity and concentration of said oxygen impurity is not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 at an inside position of said semiconductor film. Also is disclosed a method for fabricating semiconductor devices mentioned hereinbefore, which comprises depositing an amorphous semiconductor film containing oxygen impurity at a concentration not higher than 7.times.10.sup.19 atoms.multidot.cm.sup.-3 by sputtering from a semiconductor target containing oxygen impurity at a concentration not higher than 5.times.10.sup.18 atoms.multidot.cm.sup.-3 in an atmosphere comprising hydrogen at not less than 10% in terms of partial pressure; and crystallizing said amorphous semiconductor film at a temperature of from 450.degree. C. to 700.degree. C.

REFERENCES:
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patent: 4378417 (1983-03-01), Maruyama et al.
patent: 4591892 (1986-05-01), Yamazaki
patent: 4597160 (1986-07-01), Ipzi
patent: 4888305 (1989-12-01), Yamazaki et al.
patent: 4969025 (1990-11-01), Yamamoto et al.
patent: 5077223 (1991-12-01), Yamazaki

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