Process for producing semiconductor device

Details Process for producing semiconductor device Process for producing semiconductor device

1990-09-26

1993-05-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437200, 148DIG18, H01L 2144, H01L 21265

Patent

active

052100430

ABSTRACT:
A process for producing a semiconductor device having a structure in which a silicide film is in contact with an impurity diffusion layer inside a semiconductor substrate through a contact hole, in that, after the formation of the silicide film, an element of the same conductivity type as that of the impurity diffusion layer is implanted by ion implantation in the vicinity of the interface between the silicide film and the impurity diffusion layer through the silicide film.

REFERENCES:
patent: 4519127 (1985-05-01), Arai
patent: 4833519 (1989-05-01), Kawano et al.

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