Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1991-01-29

1993-05-11

Fourson, George

Fishing, trapping, and vermin destroying

437 29, 437187, 437191, 437192, H01L 21266

Patent

active

052100421

ABSTRACT:
A method for producing a semiconductor device including the steps of forming an insulating layer on a semiconductor substrate; forming a first layer of an electrode material on the insulating layer; introducing impurities into the semiconductor substrate through the first layer of the electrode material and the insulating layer by using an ion implanting process; forming a second layer of an electrode material on the first layer thereof; and forming on the impurity region an electrode pattern consisting of the first and the second layer of the electrode material and having the insulating layer below it by selectively etching the second and the first layer of the electrode material.

REFERENCES:
patent: 3775192 (1973-11-01), Beale
patent: 4025364 (1977-05-01), Smith
patent: 4080718 (1978-03-01), Richman
patent: 4173063 (1979-11-01), Kniepkamp et al.
patent: 4224733 (1980-09-01), Spadea
patent: 4290187 (1981-09-01), Stein
patent: 4297782 (1981-11-01), Ito
patent: 4466172 (1984-08-01), Batra
Rideout, IBM Tech. Disc. Bull. vol. 21, No. 9 (Feb. 1979), pp. 3823-3825.

Affiliated with

Also associated with

Rating

Method of producing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1349788