Method of manufacturing a field effect transistor with a T-shape

Details Method of manufacturing a field effect transistor with a T-shape Method of manufacturing a field effect transistor with a T-shape

1993-04-16

1994-10-25

Fourson, George

Fishing, trapping, and vermin destroying

437203, 437192, 437944, 437912, 148DIG100, 148DIG139, H01L 2144

Patent

active

053588851

ABSTRACT:
A method of producing a field effect transistor includes depositing a first insulating film and a refractory metal on a semiconductor substrate, forming a first aperture penetrating the first insulating film and the refractory metal film to provide a gate electrode production region, depositing a second insulating film on the refractory metal film, etching the second insulating film in a direction perpendicular to the surface of the substrate leaving portions of the second insulating film on opposite side walls of the first aperture to form a second aperture, defining a gate length, depositing a gate metal, and patterning the gate metal layer, the first insulating film, and the refractory metal film in a prescribed width to form a T-shaped gate structure. During etching the second insulating film, since the refractory metal film serves as a etch stopping layer, the first insulating film is not etched and its thickness remains as deposited. Therefore, the space between the over-hanging portion of the T-shaped gate electrode and the source electrode increases and the gate-to-source capacitance is reduced.

REFERENCES:
patent: 4536942 (1985-08-01), Chao et al.
patent: 4927789 (1990-05-01), Davey et al.
patent: 5032541 (1991-07-01), Sakamoto et al.
patent: 5110751 (1992-05-01), Nakagawa
patent: 5130764 (1992-07-01), Centronio et al.
patent: 5256597 (1993-10-01), Gambino
Hanyu et al. "Super low-noise HEMTs with a T-shaped WSi.sub.x Gate", Electronics Letters, vol. 24, No. 21, Oct. 13, 1988, p. 1327.

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