Method for manufacturing a bipolar transistor in a substrate

Details Method for manufacturing a bipolar transistor in a substrate Method for manufacturing a bipolar transistor in a substrate

1993-03-15

1994-10-25

Thomas, Tom

Fishing, trapping, and vermin destroying

437162, 437 67, 437228, 437909, 148DIG11, H01L 21265

Patent

active

053588827

ABSTRACT:
A method for producing a bipolar transistor completely surrounded by an insulating trench in a substrate. Insulating regions at the surface of the substrate can be produced by depositing an SiO.sub.2 layer on the basis of thermal decomposition of TEOS and subsequent structuring of the SiO.sub.2 layer. The insulating regions can be employed as a self-aligning mask for the production of a collector terminal and of a substrate terminal.

REFERENCES:
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H. B. Pogge, IEEE BCTM 1990 Conf. Proc., 1990, p. 18, "Trench Isolation Technology".
E. Bertagnolli, et al., IEEE BCTM 1991 Conf. Proc., 1991, p. 34, "Modular Deep Trench Isolation Scheme for 38 GHz Self-Aligned Double Polysilicon Bipolar Devices".
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