Submicron bipolar transistor with edge contacts

Details Submicron bipolar transistor with edge contacts Submicron bipolar transistor with edge contacts

1989-03-21

1990-04-03

Tarcza, Thomas H.

Fishing, trapping, and vermin destroying

357 59, 437193, H01L 2972, H01L 2904

Patent

active

H00007633

ABSTRACT:
A new sub-micron bipolar transistor structure is proposed which utilizes narrow horizontal conducting layers between the edges of the active areas and the associated metal contacts. This structure allows the formation of a completely vertical transistor structure and eliminates the need for the extended buried collector and collector reach-through diffusion regions.

REFERENCES:
patent: 4252582 (1981-02-01), Anantha
patent: 4303933 (1981-12-01), Horng
patent: 4318751 (1982-03-01), Horng
patent: 4481706 (1984-11-01), Roche
patent: 4495010 (1985-11-01), Kranzer
patent: 4551906 (1985-11-01), Ogura
patent: 4586968 (1986-05-01), Coello-Vera
patent: 4663831 (1987-05-01), Birrittella et al.
patent: 4696097 (1987-09-01), McLaughlin et al.

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