Semiconductor laser diode and method of making the same

Details Semiconductor laser diode and method of making the same Semiconductor laser diode and method of making the same

1979-11-23

1982-10-19

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

148171, 148172, 148175, 357 17, 29569L, H01S 319, H01L 2120

Patent

active

043553966

ABSTRACT:
A semiconductor laser diode includes a substrate of indium phosphide of one conductivity type having on a surface thereof an indium phosphide first confinement layer of the same conductivity type followed by an active layer of indium gallium arsenide phosphide and an indium phosphide second confinement layer of the opposite conductivity type. On the second confinement layer is an indium gallium arsenide phosphide capping layer of either conductivity type having a stripe shaped opening therethrough. In the opening in the capping layer is a contact layer of indium gallium arsenide phosphide of the opposite conductivity type. The confinement layers, the active layer and the capping layer are formed by liquid phase epitaxy and the contact layer is formed by vapor phase epitaxy.

REFERENCES:
patent: 3740661 (1973-06-01), D'Asaro
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 3802967 (1974-04-01), Ladany et al.
patent: 3920491 (1975-11-01), Yonezu
patent: 3982261 (1976-09-01), Antypas
patent: 4116733 (1978-09-01), Olsen et al.
patent: 4122410 (1978-10-01), Kressel et al.
patent: 4149175 (1979-04-01), Inoue et al.
patent: 4188244 (1980-02-01), Itoh et al.
patent: 4233090 (1980-11-01), Hawrylo et al.
patent: 4269635 (1981-05-01), Logan et al.
Yonezu et al., "GaAs-Al.sub.x Ga.sub.1-x As Double Heterostructure . . . ", Japanese J. Applied Physics, vol. 12, No. 10, Oct. 1973, pp. 1585-1592.
Ripper et al., "Stripe-Geometry Double Heterostructure . . . ", Applied Physics Letters, vol. 18, No. 4, Feb. 15, 1971, pp. 155-157.
Panish et al., "New Class of Diode Lasers", Scientific American, Jul. 1971, pp. 32-40.
Kirkby et al., "Photoelastic Waveguides and Their Effect on Stripe-Geometry GaAs/Ga.sub.1-x Al.sub.x As Lasers", J. App. Phys., vol. 50, No. 7, Jul. 1979, pp. 4567-4579.

Affiliated with

Also associated with

Rating

Semiconductor laser diode and method of making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser diode and method of making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser diode and method of making the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1341509