Semiconductor laser device including an arrangement for preventi

Details Semiconductor laser device including an arrangement for preventi Semiconductor laser device including an arrangement for preventi

1980-09-26

1982-12-28

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

043665691

ABSTRACT:
Disclosed herein is a semiconductor laser device including at least an active region consisting of a semiconductor material and a semiconductor region consisting of a material having a different composition from that of the active region and confining the active region, wherein at least one p-n junction is formed inside the confining region in parallel to the active region and a current flowing through the active region at a field strength below an electric field causing degradation of the semiconductor laser device is allowed to flow through regions other than the active region via the p-n junction by controlling the impurity concentration of the region having the p-n junction. The semiconductor laser device does not undergo catastrophic degradation even when applied with a current higher than a rated value.

REFERENCES:
Burnham et al., "Distributed Feedback Buried Heterostructure Diode Laser", Applied Physics Letters, vol. 29, No. 5, Sep. 1, 1976, pp. 287-289.
Nelson et al., "High-Output Power-InGaAsP (2=1.3 .mu.m) Strip-Buried Heterostructure Lasers", Appl. Phys. Lett. 35(5), Mar. 1, 1980, pp. 358-360.
Hirao et al., "Fabrication and Characterization of Narrow Stripe InGaAsP/InP Buried Heterostructure Lasers", J. Appl. Phys. 51(8), Aug. 1980, pp. 4539-4540.

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