Electrical resistors – Strain gauge type – Fluid- or gas pressure-actuated
Patent
1988-03-29
1989-08-01
Albritton, C. L.
Electrical resistors
Strain gauge type
Fluid- or gas pressure-actuated
156653, 338 42, G01L 122
Patent
active
048536695
ABSTRACT:
Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27) leading outwardly from the post. The polysilicon layer is masked and etched to expose the outer edges of the ridges and the entire structure is then immersed in an etchant which etches the silicon dioxide forming the ridges and the post but not the substrate (20) or the deposited polysilicon layer (32). A cavity structure results in which channels (35) are left in place of the ridges and extend from communication with the atmosphere to the cavity (36) left in place of the post. The cavity (36) may be sealed off from the external atmosphere by a second vapor deposition of polysilicon or silicon nitride, which fills up and seals off the channels (35), or by exposing the substrate and the structure thereon to an oxidizing ambient which results in growth of silicon dioxide in the channels sufficient to seal off the channels. Deflection of the membrane spanning the cavity occurring as a result of pressure changes, may be detected, for example, by piezoresistive devices formed on the membrane.
REFERENCES:
patent: 3489995 (1970-01-01), Laurent
patent: 3634727 (1972-01-01), Polye
patent: 3681134 (1972-08-01), Nathanson et al.
patent: 3748571 (1973-07-01), Kurtz
patent: 3853650 (1974-12-01), Hartlaub
patent: 3886584 (1975-05-01), Cook, Jr. et al.
patent: 3900597 (1975-08-01), Chruma et al.
patent: 4064549 (1977-12-01), Cretzler
patent: 4168518 (1979-09-01), Lee
patent: 4203128 (1980-05-01), Guckel et al.
patent: 4208782 (1980-06-01), Kurtz et al.
patent: 4234361 (1980-11-01), Guckel et al.
patent: 4240196 (1980-12-01), Jacobs et al.
patent: 4262399 (1981-04-01), Cady
patent: 4356211 (1982-10-01), Riseman
patent: 4371890 (1983-02-01), Anagnostopoulos et al.
patent: 4384899 (1983-05-01), Myers
patent: 4386453 (1983-06-01), Giachino et al.
patent: 4415948 (1983-11-01), Grantham et al.
patent: 4428796 (1984-01-01), Milgram
patent: 4471525 (1984-09-01), Sasaki
patent: 4502917 (1985-03-01), Chamberlin
patent: 4528855 (1985-07-01), Singh
patent: 4592238 (1986-06-01), Busta
Guckel, H. and D. W. Burns, "A Technology for Integrated Transducers", Proceedings of the International Conference of Sensors and Actuators-Transducers '85, pp. 90-92, Philadelphia, Pennsylvania, Jun. 1985.
H. Guckel, et al., "Planar Process, Integrated Displacement Sensors", in Micromachining and Micropackagaing of Transducers, C. D. Fung, et al. Ed, published Jan. 1986, Elsevier Science Publishers B.V., Amsterdam, Holland, pp. 199-203, Presented orally Nov., 1984 at Workshop in Micromachining and Micropackaging, Case Western University, Cleveland, Ohio.
Guckel, H. and D. W. Burns, "Planar Processed Polysilicon Sealed Cavities for Pressure Transducer Arrays", Proceedings of IEEE International Electron Devices Meeting, pp. 223-225, San Francisco, Cal., Dec. 1984.
H. Guckel, et al., "Laser-Recrystallized Pierzoresistive Micro-Diaphragm Sensor", Proceedings of International Conference on Sensors and Actuators-Transducers '85, pp. 1982-1985, Philadelphia, Pa., Jun. 1985.
Howe, R. T., Ph.D., Dissertation entitled "Integrated Silicon Electromechanical Vapor Sensor," University of California, dated May 30, 1984.
Burns David W.
Guckel Henry
Albritton C. L.
Wisconsin Alumni Research Foundation
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