Optically activatable semiconductor component

Details Optically activatable semiconductor component Optically activatable semiconductor component

1981-03-10

1982-12-28

Clawson, Jr., Joseph E.

357 20, 357 30, H01L 2974

Patent

active

043664962

ABSTRACT:
An optically activatable semiconductor component having at least one light-sensitive surface area containing a light-sensitive PN junction which is biased in a nonconducting direction when exposed to light, wherein in order to avoid a reduction in the inhibiting voltage of the optically activatable semiconductor component, the light-sensitive PN junction leading to the light-sensitive surface of the component is shaped such that it has a simple, preferably circular or tubular form at the light-sensitive surface. In one embodiment, plural light-sensitive PN junctions extend to the light-sensitive surface defining several subareas. The technology is applicable to thyristors, diodes, transistors or other light-sensitive semiconductor components.

REFERENCES:
patent: 3943550 (1976-03-01), Konishi et al.
patent: 3987476 (1976-10-01), Sittig
patent: 4142201 (1979-02-01), Sittig et al.
patent: 4186409 (1980-01-01), McMullin

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