Vertical MOSFET with reduced turn-on resistance

Details Vertical MOSFET with reduced turn-on resistance Vertical MOSFET with reduced turn-on resistance

1979-08-06

1982-12-28

Edlow, Martin H.

357 22, H01L 2978

Patent

active

043664954

ABSTRACT:
A vertical MOSFET structure which includes a drain which comprises a high conductivity region and a low conductivity region. The high conductivity drain region is contoured so as to minimize the device turn-on resistance without degrading the device breakdown voltage.

REFERENCES:
patent: 3891479 (1975-06-01), Zwernemann
patent: 4070690 (1978-01-01), Wickstrom
patent: 4101922 (1978-07-01), Tihanyi
patent: 4115793 (1981-09-01), Nishizawa
patent: 4145700 (1979-03-01), Jambotkar
Electronics, Oct. 13, 1969, p. 207.

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