Method of making laser recrystallized silicon-on-insulator nonvo

Details Method of making laser recrystallized silicon-on-insulator nonvo Method of making laser recrystallized silicon-on-insulator nonvo

1985-03-11

1986-10-28

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148187, 148DIG77, 148DIG91, 357 231, 357 91, 427 531, H01L 21263, C30B 1306

Patent

active

046190341

ABSTRACT:
Disclosed is a nonvolatile memory device which utilizes a laser beam recrystallized silicon layer having source-channel-drain regions. Underlying the recrystallized layer and separated therefrom by a memory dielectric is a gate in alignment with the source and drain. The gate is formed directly on a substrate of an insulative material (e.g. non-silicon material).
The process of forming the above device comprises forming a conductive polysilicon gate on a substrate followed by a memory nitride layer deposition thereon. A thick oxide layer is formed over the nitride followed by removal of the thick oxide corresponding to a central portion of the gate thereby exposing the nitride therebeneath. The exposed nitride surface is thermally converted into a thin, stoichiometric memory SiO.sub.2. A doped polysilicon layer is then formed on the structure and thereafter converted to recrystallized silicon by subjecting it to laser radiation. The recrystallized silicon is patterned into the device active area and a source and drain in alignment with the underlying gate are implanted therein.

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Colinge et al. IEEE-IEDM (1981), p. 557.
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