Semiconductor device

Details Semiconductor device Semiconductor device

1987-09-24

1990-01-16

Hille, Rolf

357 59, 357 51, H01L 2348, H01L 2352

Patent

active

048947059

ABSTRACT:
A semiconductor device has high-resistance polysilicon sections sandwiched between two wiring layers. Low-resistance sections are formed by ion-injection of impurities across selected ones of these high-resistance polysilicon sections to electrically connect the two wiring layers according to a user's specification.

REFERENCES:
patent: 4297721 (1981-10-01), McKenny et al.
patent: 4319261 (1982-03-01), Kub
patent: 4541006 (1985-09-01), Ariizumi et al.
patent: 4546366 (1985-10-01), Buchanan
patent: 4604641 (1986-08-01), Konishi
patent: 4673969 (1987-06-01), Ariizumi et al.
patent: 4710897 (1987-12-01), Masuoka et al.

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