Semiconductor device detector and method of forming same

Details Semiconductor device detector and method of forming same Semiconductor device detector and method of forming same

Filed on

1988-05-09

Date issued

1990-01-16

Examiner

Edlow, Martin H.

Other Related Categories

357 24, 357 16, H01L 2714

Type

Patent

Status

active

Patent number

048947016

Description

ABSTRACT:
A semiconductor device and method of making the device in which portions of the device may be completed prior to forming the detector region. The device comprises a substrate, a first insulating layer over the substrate, a first level semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, a metallic contact extending through the second insulating layer and a third insulating layer overlying the contact. A detector region is spaced apart from the contact. The method comprises the steps of forming a first insulating layer over the substrate, forming a semiconductor layer over the first insulating layer, forming a contact through the second insulating layer, forming a third insulating layer over the contact and forming an opening through the first, second and third insulating layers and forming a detector region in the opening.

REFERENCES:
patent: 3968272 (1976-07-01), Anand
patent: 4056642 (1976-07-01), Saxena et al.
patent: 4233337 (1980-11-01), Friedman et al.
patent: 4362575 (1982-12-01), Wallace
patent: 4608749 (1986-09-01), Marada
patent: 4661168 (1987-04-01), Maier
Kimata et al., 1987 IEEE I.S.S.C., pp. 110-111.
Ishirara et al., 1980 IEEE I.S.S.C., pp. 24-25.
"A 512.times.512 Element PtSi Schottky-Barrier Infrared Image Sensor" by M. Kimata et al., 1987 IEEE International Solid State Circuits Conference, pp. 110-111.
"160.times.244 Element PtSi Schottky-Barrier IR-CCD Image Sensor" by W. F. Kosonocky et al., IEEE Transactions on Electron Devices, Vol. ED-32, No. 8, Aug. 1985.

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