Method of forming a thin and continuous film of conductive mater

Details Method of forming a thin and continuous film of conductive mater Method of forming a thin and continuous film of conductive mater

1993-09-01

1994-10-25

King, Roy V.

Coating processes

Electrical product produced

Metal coating

427123, 427250, 427405, 427404, C23C 1400, B05D 512

Patent

active

053587367

ABSTRACT:
Stable nuclei of a conductive material are formed on a substrate in a first PVD process either by the adsorption of a nucleus forming gas onto the substrane surface and the subsequent deposition of the conductive material, or by the deposition of the conductive material at a partial pressure of a nucleus forming gas of less than 10.sup.-8 Torr, and afterward, a thin and continuous film of the conductive material is formed in a second PVD process. The substrate temperature is controlled so as not to exceed room temperature in the first PVD process, and so as to substantially exceed room temperature in a second PVD process. A thin and continuous film of a conductive material is also obtained by interrupting the deposition of the conductive material on a substrate provided with via-holes of small size by a PVD process, annealing the deposit, and then re-depositing the conductive material to obtain a continuous film. The annealing advantageously eliminates an overhang configulation formed at the opening of the via-hole, which otherwise prevents the deposited atoms from entering the via-hole, to thereby allow a continuous film to be formed within the small via-hole.

REFERENCES:
patent: 4828870 (1989-05-01), Ando et al.

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