Gate control circuit for a switching power MOS transistor

Details Gate control circuit for a switching power MOS transistor Gate control circuit for a switching power MOS transistor

1989-02-02

1990-01-16

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307570, 307577, 307578, 307446, 307448, H03K 17687

Patent

active

048945684

ABSTRACT:
A gate control circuit for a power MOS transistor (1), the first main electrode (D) of which is connected to a high voltage (V.sub.CC) through a load (L), the second main electrode (S) of which is grounded and the gate (G) of which is connected, during the switching ON period, to a low voltage source (V.sub.DD), comprises a switch (S1) for connecting at the switching ON of the power MOS transistor its first main electrode to its gate.

REFERENCES:
patent: 3515905 (1970-06-01), Raper
patent: 3740581 (1973-06-01), Pfiffner
patent: 4256978 (1981-03-01), Pinckaers
patent: 4480201 (1984-10-01), Jaeschke
patent: 4663547 (1987-05-01), Baliga et al.
Patent Abstracts of Japan, vol. 10, No. 58.

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